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63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115

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  • Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115

Features

  • Low Saturation Voltage PNP Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

SpecSpec class="init"> 63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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  • AXEL GLOBAL
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  • Semiconductors
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  • 63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115
  • AXEL GLOBAL
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  • 63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115
Nexperia

63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115

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  • Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115

特徴

  • Low Saturation Voltage PNP Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Spec

  • Quantity:1bag(10pieces)
  • Transistor Type:PNP
  • Maximum DC Collector Current:5 A
  • Maximum Collector Emitter Voltage:40 V
  • Package Type:SOT-223 (SC-73)
  • Mounting Type:Surface Mount
  • Maximum Power Dissipation:2 W
  • Minimum DC Current Gain:50
  • Transistor Configuration:Single
  • Maximum Collector Base Voltage:40 V
  • Maximum Emitter Base Voltage:6 V
  • Maximum Operating Frequency:120 MHz
  • Pin Count:4
  • Number of Elements per Chip:1
  • Maximum Collector Emitter Saturation Voltage:0.375 V
  • CODE No.:518-2034
  •  
Order No.Order No.ss="init"> 63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • RS Components
  • 63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115
Nexperia

63-8106-29 Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115

  • 印刷
  • PDF
  • Nexperia PBSS5540Z,115 PNP Transistor, 5 A, 40 V, 4-Pin SOT-223 PBSS5540Z,115

特徴

  • Low Saturation Voltage PNP Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

仕様

  • Quantity:1bag(10pieces)
  • Transistor Type:PNP
  • Maximum DC Collector Current:5 A
  • Maximum Collector Emitter Voltage:40 V
  • Package Type:SOT-223 (SC-73)
  • Mounting Type:Surface Mount
  • Maximum Power Dissipation:2 W
  • Minimum DC Current Gain:50
  • Transistor Configuration:Single
  • Maximum Collector Base Voltage:40 V
  • Maximum Emitter Base Voltage:6 V
  • Maximum Operating Frequency:120 MHz
  • Pin Count:4
  • Number of Elements per Chip:1
  • Maximum Collector Emitter Saturation Voltage:0.375 V
  • CODE No.:518-2034
  •  
アズワン品番 63-8106-29
Model No. PBSS5540Z,115
標準価格 JPY: 1,000 USD: 6.27
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock

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