63-8098-78 [Discontinued]NTHC5513T1G Dual N/P-Channel MOSFET, 3 A, 3.9 A, 20 V, 8-Pin ChipFET ON Semiconductor NTHC5513T1G
Features
- Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology.
Spec
- Quantity:1set(3000pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:3 A, 3.9 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:115 mΩ, 240 mΩ
- Maximum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:ChipFET
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:163-1109
| Order No. | 63-8098-78 | |
|---|---|---|
| Model No. | NTHC5513T1G | |
| Standard price |
JPY: 91,370
USD: 572.75
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]NTHC5513T1G Dual N/P-Channel MOSFET, 3 A, 3.9 A, 20 V, 8-Pin ChipFET ON Semiconductor NTHC5513T1G](https://aimg.as-1.co.jp/c/63/8098/78/63809878.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)