63-8098-52 SI1029X-T1-GE3 Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SOT-523 Vishay SI1029X-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(20pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:190 mA, 300 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:3 Ω, 8 Ω
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-523 (SC-89)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:250 mW
- Number of Elements per Chip:2
- CODE No.:787-9055
| Order No. | 63-8098-52 | |
|---|---|---|
| Model No. | SI1029X-T1-GE3 | |
| Standard price |
JPY: 2,010
USD: 12.51
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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