63-8098-36 ［Discontinued］SI1026X-T1-GE3 Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-523 Vishay SI1026X-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:300 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:2.5 Ω
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-523 (SC-89)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:250 mW
- Maximum Operating Temperature:+150 °C
- CODE No.:165-6971
| Order No. | 63-8098-36 | |
|---|---|---|
| Model No. | SI1026X-T1-GE3 | |
| Standard price |
JPY: 72,000
USD: 447.98
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
||
| Stock in Japan | - | |