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ON Semiconductor

63-8094-53　NTLJD3119CTBG Dual N/P-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN ON Semiconductor　NTLJD3119CTBG

Features

  • Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology.

Spec

  • Quantity:1bag(10pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:4.1 A, 4.6 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:120 mΩ, 200 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-8 V, +8 V
  • Package Type:WDFN
  • Mounting Type:Surface Mount
  • Pin Count:6
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.3 W
  • Typical Turn-On Delay Time:3.8 ns, 5.2 ns
  • CODE No.:780-0655
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Order No. 63-8094-53
Model No. NTLJD3119CTBG
Standard price JPY: 1,420 USD: 8.84
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock

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