63-8091-22 SIRA06DP-T1-GE3 N-Channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay SIRA06DP-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:3.5 mΩ
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Maximum Power Dissipation:62.5 W
- Transistor Material:Si
- CODE No.:787-9373
| Order No. | 63-8091-22 | |
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| Model No. | SIRA06DP-T1-GE3 | |
| Standard price |
JPY: 1,380
USD: 8.59
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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