63-8091-15 SIR401DP-T1-GE3 P-Channel MOSFET, 50 A, 20 V TrenchFET, 8-Pin PowerPAK SO Vishay SIR401DP-T1-GE3
Features
- P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
Spec
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:50 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:7.7 mΩ
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Maximum Power Dissipation:39 W
- Maximum Operating Temperature:+150 °C
- CODE No.:787-9342
| Order No. | 63-8091-15 | |
|---|---|---|
| Model No. | SIR401DP-T1-GE3 | |
| Standard price |
JPY: 1,580
USD: 9.83
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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