63-8090-98 ［Discontinued］SIRA02DP-T1-GE3 N-Channel MOSFET, 50 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay SIRA02DP-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:50 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:2.7 mΩ
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Maximum Power Dissipation:71.4 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-7072
| Order No. | 63-8090-98 | |
|---|---|---|
| Model No. | SIRA02DP-T1-GE3 | |
| Standard price |
JPY: 323,680
USD: 2,013.94
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
|
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| Stock in Japan | - | |