63-8090-92 SIRA14DP-T1-GE3 N-Channel MOSFET, 58 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay SIRA14DP-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:58 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:8.5 mΩ
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:PowerPAK SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Maximum Power Dissipation:31.2 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-6980
| Order No. | 63-8090-92 | |
|---|---|---|
| Model No. | SIRA14DP-T1-GE3 | |
| Standard price |
JPY: 174,000
USD: 1,082.63
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(3000pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|