63-8090-90 SISA04DN-T1-GE3 N-Channel MOSFET, 40 A, 30 V TrenchFET, 8-Pin PowerPAK 1212 Vishay SISA04DN-T1-GE3
Features
- N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:40 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:3.1 mΩ
- Minimum Gate Threshold Voltage:1.1V
- Maximum Gate Source Voltage:-16 V, +20 V
- Package Type:PowerPAK 1212
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:52 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-2807
| Order No. | 63-8090-90 | |
|---|---|---|
| Model No. | SISA04DN-T1-GE3 | |
| Standard price |
JPY: 354,000
USD: 2,202.59
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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