63-8087-51 [Discontinued]STH80N10F7-2 N-Channel MOSFET, 80 A, 100 V STripFET H7, 3-Pin H2PAK-2 STMicroelectronics STH80N10F7-2
Features
- N-Channel STripFET™ H7 Series, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:9.5 mΩ
- Maximum Gate Threshold Voltage:4.5V
- Minimum Gate Threshold Voltage:2.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:H2PAK-2
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:110 W
- Number of Elements per Chip:1
- CODE No.:792-5877
| Order No. | 63-8087-51 | |
|---|---|---|
| Model No. | STH80N10F7-2 | |
| Standard price |
JPY: 1,210
USD: 7.59
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]STH80N10F7-2 N-Channel MOSFET, 80 A, 100 V STripFET H7, 3-Pin H2PAK-2 STMicroelectronics STH80N10F7-2](https://aimg.as-1.co.jp/c/63/8087/51/63808743.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)