63-8087-48 [Discontinued]STH320N4F6-2 N-Channel MOSFET, 200 A, 40 V DeepGate, STripFET, 3-Pin H2PAK STMicroelectronics STH320N4F6-2
Features
- N-Channel STripFET™ DeepGate™, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:200 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:1.3 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:H2PAK
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:300 W
- Width:10.4mm
- CODE No.:791-7680
| Order No. | 63-8087-48 | |
|---|---|---|
| Model No. | STH320N4F6-2 | |
| Standard price |
JPY: 2,890
USD: 17.98
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |
![[Discontinued]STH320N4F6-2 N-Channel MOSFET, 200 A, 40 V DeepGate, STripFET, 3-Pin H2PAK STMicroelectronics STH320N4F6-2](https://aimg.as-1.co.jp/c/63/8087/48/63808743.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)