63-8087-45 ［Discontinued］STH320N4F6-2 N-Channel MOSFET, 200 A, 40 V DeepGate, STripFET, 3-Pin H2PAK STMicroelectronics STH320N4F6-2
Features
- N-Channel STripFET™ DeepGate™, STMicroelectronics. STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Spec
- Quantity:1set(1000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:200 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:1.3 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:H2PAK
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:300 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-6849
| Order No. | 63-8087-45 | |
|---|---|---|
| Model No. | STH320N4F6-2 | |
| Standard price |
JPY: 375,000
USD: 2,333.25
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
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| Stock in Japan | - | |