63-8058-30 [Discontinued]ON Semiconductor NGTB45N60S2WG IGBT, 90 A 600 V, 3-Pin TO-247 NGTB45N60S2WG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1set(30pieces)
- Maximum Continuous Collector Current:90 A
- Maximum Collector Emitter Voltage:600 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:300 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Minimum Operating Temperature:-55 °C
- CODE No.:145-3476
| Order No. | 63-8058-30 | |
|---|---|---|
| Model No. | NGTB45N60S2WG | |
| Standard price |
JPY: 10,200
USD: 63.94
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
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| Stock in Japan | - | |
![[Discontinued]ON Semiconductor NGTB45N60S2WG IGBT, 90 A 600 V, 3-Pin TO-247 NGTB45N60S2WG](https://aimg.as-1.co.jp/c/63/8058/30/63805830.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)