63-8058-29 ［Discontinued］ON Semiconductor NGTB25N120SWG IGBT, 50 A 1200 V, 3-Pin TO-247 NGTB25N120SWG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:50 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:385 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Minimum Operating Temperature:-55 °C
- CODE No.:882-9818
| Order No. | 63-8058-29 | |
|---|---|---|
| Model No. | NGTB25N120SWG | |
| Standard price |
JPY: 1,110
USD: 6.91
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
|
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| Stock in Japan | - | |