63-8058-23 [Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG
FeaturesFeatures class="init">
[Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG 63-8058-23 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
63-8058-23 [Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG
特徴
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(5pieces)
- Maximum Continuous Collector Current:30 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:278 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Gate Capacitance:2615pF
- CODE No.:882-9802
-
Order No.
63-8058-23
Model No.Model No. class="init">
[Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG 63-8058-23 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
63-8058-23 [Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG
特徴
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
仕様
- Quantity:1bag(5pieces)
- Maximum Continuous Collector Current:30 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:278 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Gate Capacitance:2615pF
- CODE No.:882-9802
-
アズワン品番
63-8058-23
型番
NGTB15N120IHWG
Standard price
JPY: 1,930
USD: 12.01
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(5pieces)
在庫数
-
63-8058-23 [Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG
特徴
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(5pieces)
- Maximum Continuous Collector Current:30 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:278 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Gate Capacitance:2615pF
- CODE No.:882-9802
| Order No. | 63-8058-23 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Model No.Model No. class="init">
63-8058-23 [Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG特徴
仕様
| ||||||||||||||||
![[Discontinued]ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG](https://aimg.as-1.co.jp/c/63/8058/23/63805822.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)