63-8058-23 ［Discontinued］ON Semiconductor NGTB15N120IHWG IGBT, 30 A 1200 V, 3-Pin TO-247 NGTB15N120IHWG
Features
- IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Spec
- Quantity:1bag(5pieces)
- Maximum Continuous Collector Current:30 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:278 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:16.25mm
- Width:5.3mm
- Height:21.4mm
- Dimensions:16.25 x 5.3 x 21.4mm
- Gate Capacitance:2615pF
- CODE No.:882-9802
| Order No. | 63-8058-23 | |
|---|---|---|
| Model No. | NGTB15N120IHWG | |
| Standard price |
JPY: 1,930
USD: 12.01
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |