63-8056-17 VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G
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63-8056-17 VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G 【AXEL GLOBAL】 アズワン Contact us
Microchip 63-8056-17 VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G
Features
- Supertex P-Channel Enhancement Mode MOSFET Transistors. The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
SpecSpec class="init">
63-8056-17 VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G 【AXEL GLOBAL】 アズワン Contact us
Microchip 63-8056-17 VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G
特徴
- Supertex P-Channel Enhancement Mode MOSFET Transistors. The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Spec
- Quantity:1bag(1000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:250 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:15 Ω
- Maximum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-92
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-4218
Order No.Order No.ss="init"> 63-8056-17 VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G 【AXEL GLOBAL】 アズワン Contact us
Microchip 63-8056-17 VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip VP2106N3-G
特徴
- Supertex P-Channel Enhancement Mode MOSFET Transistors. The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
仕様
- Quantity:1bag(1000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:250 mA
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:15 Ω
- Maximum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TO-92
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Maximum Power Dissipation:1 W
- Minimum Operating Temperature:-55 °C
- CODE No.:165-4218
アズワン品番 63-8056-17 Model No. VP2106N3-G 標準価格 JPY: 86,900 USD: 540.69 Excange rate 1USD= 160.72JPY
Valid price in JapanQuantity 1bag(1000pieces) Stock in Japan
Supplier Stock
