63-8034-01 PD55015-E N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Features
- RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:5 A
- Maximum Drain Source Voltage:40 V
- Maximum Gate Threshold Voltage:5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:PowerSO
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:RF MOSFET
- Maximum Power Dissipation:73 W
- Number of Elements per Chip:1
- CODE No.:829-0627
| Order No. | 63-8034-01 | |
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| Model No. | PD55015-E | |
| Standard price |
JPY: 4,840
USD: 30.11
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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