63-8032-16 [Discontinued]Infineon 1200V 50A, Silicon Junction Diode, 3-Pin D2PAK IDB30E120ATMA1 IDB30E120ATMA1
Features
- Fast Switching Emitter Controlled Diodes, Infineon. The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.. Rapid 1 diode switches between 18kHz and 40kHz 1.35V temperature-stable forward voltage Ideal for Power Factor Correction (PFC) topologies The Rapid 2 diode switches between 40 kHz and 100 kHz Low reverse recovery charge: forward voltage ratio for BiC performance Low reverse recovery time Low turn-on losses on the boost switch Ultra-fast Diode 600 V/1200 V Emitter Controlled technology Qualified according to JEDEC Standard Good EMI behaviour Low conduction losses Easy paralleling
Spec
- Quantity:1bag(10pieces)
- Diode Configuration:Single
- Number of Elements per Chip:1
- Peak Reverse Repetitive Voltage:1200V
- Mounting Type:Surface Mount
- Package Type:D2PAK (TO-263)
- Diode Technology:Silicon Junction
- Pin Count:3
- Maximum Forward Voltage Drop:1.65V
- Peak Reverse Recovery Time:380ns
- Peak Non-Repetitive Forward Surge Current:102A
- CODE No.:827-5104
| Order No. | 63-8032-16 | |
|---|---|---|
| Model No. | IDB30E120ATMA1 | |
| Standard price |
JPY: 3,150
USD: 19.60
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]Infineon 1200V 50A, Silicon Junction Diode, 3-Pin D2PAK IDB30E120ATMA1 IDB30E120ATMA1](https://aimg.as-1.co.jp/c/63/8032/16/63803215.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)