Infineon

63-8032-16 [Discontinued]Infineon 1200V 50A, Silicon Junction Diode, 3-Pin D2PAK IDB30E120ATMA1 IDB30E120ATMA1

Features

  • Fast Switching Emitter Controlled Diodes, Infineon. The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.. Rapid 1 diode switches between 18kHz and 40kHz 1.35V temperature-stable forward voltage Ideal for Power Factor Correction (PFC) topologies The Rapid 2 diode switches between 40 kHz and 100 kHz Low reverse recovery charge: forward voltage ratio for BiC performance Low reverse recovery time Low turn-on losses on the boost switch Ultra-fast Diode 600 V/1200 V Emitter Controlled technology Qualified according to JEDEC Standard Good EMI behaviour Low conduction losses Easy paralleling

Spec

  • Quantity:1bag(10pieces)
  • Diode Configuration:Single
  • Number of Elements per Chip:1
  • Peak Reverse Repetitive Voltage:1200V
  • Mounting Type:Surface Mount
  • Package Type:D2PAK (TO-263)
  • Diode Technology:Silicon Junction
  • Pin Count:3
  • Maximum Forward Voltage Drop:1.65V
  • Peak Reverse Recovery Time:380ns
  • Peak Non-Repetitive Forward Surge Current:102A
  • CODE No.:827-5104
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Order No. 63-8032-16
Model No. IDB30E120ATMA1
Standard price JPY: 3,150 USD: 19.60
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(10pieces)
  Discontinued
Stock in Japan -