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Infineon

63-8032-03　IRFP250MPBF N-Channel MOSFET, 30 A, 200 V HEXFET, 3-Pin TO-247AC Infineon　IRFP250MPBF

Features

  • N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:30 A
  • Maximum Drain Source Voltage:200 V
  • Maximum Drain Source Resistance:75 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-247AC
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:214 W
  • Number of Elements per Chip:1
  • CODE No.:827-4004
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Order No. 63-8032-03
Model No. IRFP250MPBF
Standard price JPY: 3,140 USD: 19.68
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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