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Infineon

63-8031-89　［Discontinued］IRF7389TRPBF Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V HEXFET, 8-Pin SOIC Infineon　IRF7389TRPBF

Features

  • Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Spec

  • Quantity:1set(4000pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:5.3 A, 7.3 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:46 mΩ, 98 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.5 W
  • Typical Turn-On Delay Time:8.1 ns, 13 ns
  • CODE No.:168-7933
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Order No. 63-8031-89
Model No. IRF7389TRPBF
Standard price JPY: 367,000 USD: 2,283.47
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(4000pieces)
  Discontinued
Stock in Japan -

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