63-8027-65 DMG6602SVT-7 Dual N/P-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7
Features
- Dual N/P-Channel MOSFET, Diodes Inc.
Spec
- Quantity:1bag(100pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:2.1 A, 3.4 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:100 mΩ, 140 mΩ
- Maximum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:TSOT-26
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.27 W
- Dimensions:2.9 x 1.6 x 0.9mm
- CODE No.:822-2532
| Order No. | 63-8027-65 | |
|---|---|---|
| Model No. | DMG6602SVT-7 | |
| Standard price |
JPY: 7,930
USD: 49.34
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(100pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|