63-8023-69 SI4909DY-T1-GE3 Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3
Features
- Dual P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:6.5 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:34 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.2 W
- Typical Gate Charge @ Vgs:41.5 nC @ 10 V
- CODE No.:165-6282
| Order No. | 63-8023-69 | |
|---|---|---|
| Model No. | SI4909DY-T1-GE3 | |
| Standard price |
JPY: 318,000
USD: 1,993.36
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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