63-8016-95 SI4564DY-T1-GE3 Dual N/P-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:7.2 A, 8 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:20 mΩ, 28 mΩ
- Minimum Gate Threshold Voltage:0.8V
- Maximum Gate Source Voltage:-20 V, -16 V, +16 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.1 W, 3.2 W
- Transistor Material:Si
- CODE No.:165-7276
| Order No. | 63-8016-95 | |
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| Model No. | SI4564DY-T1-GE3 | |
| Standard price |
JPY: 422,000
USD: 2,625.68
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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