63-8016-93 SI2366DS-T1-GE3 N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3
Features
- N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.8 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:42 mΩ
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.1 W
- Maximum Operating Temperature:+150 °C
- CODE No.:165-6910
| Order No. | 63-8016-93 | |
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| Model No. | SI2366DS-T1-GE3 | |
| Standard price |
JPY: 129,000
USD: 808.63
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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