63-8009-87 ON Semiconductor HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263) HGT1S10N120BNST
Features
- Discrete IGBTs, 1000V and over, Fairchild Semiconductor
Spec
- Quantity:1bag(2pieces)
- Maximum Continuous Collector Current:80 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:298 W
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Channel Type:N
- Pin Count:3
- Switching Speed:1MHz
- Transistor Configuration:Single
- Length:10.67mm
- Width:11.33mm
- Height:4.83mm
- Dimensions:10.67 x 11.33 x 4.83mm
- Maximum Operating Temperature:+150 °C
- CODE No.:807-6660
| Order No. | 63-8009-87 | |
|---|---|---|
| Model No. | HGT1S10N120BNST | |
| Standard price |
JPY: 2,120
USD: 13.29
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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