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ON Semiconductor

63-8006-28　2N7002KW N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 ON Semiconductor　2N7002KW

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:300 mA
  • Maximum Drain Source Voltage:60 V
  • Maximum Drain Source Resistance:4.8 Ω
  • Minimum Gate Threshold Voltage:1.1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:350 mW
  • Minimum Operating Temperature:-55 °C
  • CODE No.:166-2856
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Order No. 63-8006-28
Model No. 2N7002KW
Standard price JPY: 41,100 USD: 257.63
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(3000pieces)
Stock in Japan
Supplier Stock

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