63-7990-59 ON Semi MMBTH10LT1G NPN Transistor, 4 mA, 25 V, 3-Pin SOT-23 MMBTH10LT1G
Features
- Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. RF Bipolar Transistors, ON Semiconductor
Spec
- Quantity:1set(3000pieces)
- Transistor Type:NPN
- Maximum DC Collector Current:4 mA
- Maximum Collector Emitter Voltage:25 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Maximum Power Dissipation:225 mW
- Minimum DC Current Gain:120
- Transistor Configuration:Single
- Maximum Collector Base Voltage:30 V dc
- Maximum Emitter Base Voltage:3 V
- Maximum Operating Frequency:100 MHz
- Pin Count:3
- Number of Elements per Chip:1
- Maximum Base Emitter Saturation Voltage:0.95 V dc
- CODE No.:145-3595
| Order No. | 63-7990-59 | |
|---|---|---|
| Model No. | MMBTH10LT1G | |
| Standard price |
JPY: 20,200
USD: 126.62
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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