ON Semiconductor

63-7990-59 ON Semi MMBTH10LT1G NPN Transistor, 4 mA, 25 V, 3-Pin SOT-23 MMBTH10LT1G

Features

  • Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard. RF Bipolar Transistors, ON Semiconductor

Spec

  • Quantity:1set(3000pieces)
  • Transistor Type:NPN
  • Maximum DC Collector Current:4 mA
  • Maximum Collector Emitter Voltage:25 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Maximum Power Dissipation:225 mW
  • Minimum DC Current Gain:120
  • Transistor Configuration:Single
  • Maximum Collector Base Voltage:30 V dc
  • Maximum Emitter Base Voltage:3 V
  • Maximum Operating Frequency:100 MHz
  • Pin Count:3
  • Number of Elements per Chip:1
  • Maximum Base Emitter Saturation Voltage:0.95 V dc
  • CODE No.:145-3595
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Order No. 63-7990-59
Model No. MMBTH10LT1G
Standard price JPY: 20,200 USD: 126.62
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(3000pieces)
Stock in Japan
Supplier Stock