Vishay

63-7981-68　SI4532CDY-T1-GE3 Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay　SI4532CDY-T1-GE3

Features

Dual N/P-Channel MOSFET, Vishay Semiconductor

Spec

Quantity:1bag(20pieces)
Channel Type:N, P
Maximum Continuous Drain Current:4.3 A, 6 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:65 mΩ, 140 mΩ
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:SOIC
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Maximum Power Dissipation:2.78 W
Number of Elements per Chip:2
CODE No.:787-9020

Order No.Order No.ss="init"> 63-7981-68 SI4532CDY-T1-GE3 Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay　SI4532CDY-T1-GE3 【AXEL GLOBAL】 アズワン

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Vishay

63-7981-68　SI4532CDY-T1-GE3 Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay　SI4532CDY-T1-GE3

印刷

特徴

Dual N/P-Channel MOSFET, Vishay Semiconductor

仕様

Quantity:1bag(20pieces)
Channel Type:N, P
Maximum Continuous Drain Current:4.3 A, 6 A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:65 mΩ, 140 mΩ
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:SOIC
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Maximum Power Dissipation:2.78 W
Number of Elements per Chip:2
CODE No.:787-9020

アズワン品番	63-7981-68
Model No.	SI4532CDY-T1-GE3
標準価格	JPY: 2,360 USD: 14.68 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1bag(20pieces)
在庫数
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