63-7981-67 SI4532CDY-T1-GE3 Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1set(2500pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:4.3 A, 6 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:65 mΩ, 140 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Maximum Power Dissipation:2.78 W
- Typical Input Capacitance @ Vds:305 pF@ 15 V, 340 pF@ -15 V
- CODE No.:165-7226
| Order No. | 63-7981-67 | |
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| Model No. | SI4532CDY-T1-GE3 | |
| Standard price |
JPY: 162,000
USD: 1,015.48
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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