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• 63-7812-78 FDC638P P-Channel MOSFET, 4.5 A, 20 V PowerTrench, 6-Pin SOT-23 ON Semiconductor　FDC638P

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• 63-7812-78 FDC638P P-Channel MOSFET, 4.5 A, 20 V PowerTrench, 6-Pin SOT-23 ON Semiconductor　FDC638P

ON Semiconductor

63-7812-78　FDC638P P-Channel MOSFET, 4.5 A, 20 V PowerTrench, 6-Pin SOT-23 ON Semiconductor　FDC638P

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特徴

• PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Spec

• Quantity:1set(3000pieces)
• Channel Type : P
• Maximum Continuous Drain Current : 4.5 A
• Maximum Drain Source Voltage : 20 V
• Maximum Drain Source Resistance : 72 mΩ
• Minimum Gate Threshold Voltage : 0.4V
• Maximum Gate Source Voltage : -8 V, +8 V
• Package Type : SOT-23
• Mounting Type : Surface Mount
• Transistor Configuration : Single
• Channel Mode : Enhancement
• Category : Power MOSFET
• Maximum Power Dissipation : 1.6 W
• Minimum Operating Temperature : -55 °C
• CODE No.:166-1649
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Order No.	63-7812-78
Model No.	FDC638P
標準価格	JPY: 174,000 USD: 1,090.70 Excange rate 1USD= 159.53JPY Valid price in Japan
入り数	1set(3000pieces)
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