63-7804-58 IPB107N20N3GATMA1 N-Channel MOSFET, 88 A, 200 V OptiMOS, 3-Pin D2PAK Infineon IPB107N20N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 88 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 11 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Maximum Power Dissipation : 300 W
- Dimensions : 10.31 x 9.45 x 4.57mm
- CODE No.:754-5434
| Order No. | 63-7804-58 | |
|---|---|---|
| Model No. | IPB107N20N3GATMA1 | |
| Standard price |
JPY: 960
USD: 6.02
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|