63-7804-54 [Discontinued]IPB025N10N3GATMA1 N-Channel MOSFET, 180 A, 100 V OptiMOS 3, 7-Pin D2PAK Infineon IPB025N10N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(1000pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 180 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 4.4 mΩ
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 7
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 300 W
- Typical Turn-On Delay Time : 34 ns
- CODE No.:911-0825
| Order No. | 63-7804-54 | |
|---|---|---|
| Model No. | IPB025N10N3GATMA1 | |
| Standard price |
JPY: 702,000
USD: 4,400.43
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1set(1000pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]IPB025N10N3GATMA1 N-Channel MOSFET, 180 A, 100 V OptiMOS 3, 7-Pin D2PAK Infineon IPB025N10N3GATMA1](https://aimg.as-1.co.jp/c/63/7804/54/63780454.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)