Infineon

63-7804-51 Infineon IKW50N60TFKSA1 IGBT, 100 A 600 V, 3-Pin TO-247 IKW50N60TFKSA1

Features

  • Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C

Spec

  • Quantity:1piece
  • Maximum Continuous Collector Current : 100 A
  • Maximum Collector Emitter Voltage : 600 V
  • Maximum Gate Emitter Voltage : ±20V
  • Maximum Power Dissipation : 333 W
  • Package Type : TO-247
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Transistor Configuration : Single
  • Length : 16.03mm
  • Width : 21.1mm
  • Height : 5.16mm
  • Dimensions : 16.03 x 21.1 x 5.16mm
  • Minimum Operating Temperature : -40 °C
  • CODE No.:754-5409
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Order No. 63-7804-51
Model No. IKW50N60TFKSA1
Standard price JPY: 1,180 USD: 7.40
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock