63-7803-13 [Discontinued]IPB60R099CPAATMA1 N-Channel MOSFET, 31 A, 600 V CoolMOS CP, 3-Pin D2PAK Infineon IPB60R099CPAATMA1
Features
- Infineon CoolMOS™CP Power MOSFET
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 31 A
- Maximum Drain Source Voltage : 600 V
- Maximum Drain Source Resistance : 105 mΩ
- Maximum Gate Threshold Voltage : 20V
- Minimum Gate Threshold Voltage : 20V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 255 W
- Maximum Operating Temperature : +150 °C
- CODE No.:753-3002
| Order No. | 63-7803-13 | |
|---|---|---|
| Model No. | IPB60R099CPAATMA1 | |
| Standard price |
JPY: 860
USD: 5.35
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
![[Discontinued]IPB60R099CPAATMA1 N-Channel MOSFET, 31 A, 600 V CoolMOS CP, 3-Pin D2PAK Infineon IPB60R099CPAATMA1](https://aimg.as-1.co.jp/c/63/7803/13/63780313.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)