63-7803-02 [Out of stock]BSP318SH6327XTSA1 N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP318SH6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(1000pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 2.6 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 150 mΩ
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1.2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Small Signal
- Maximum Power Dissipation : 1.8 W
- Transistor Material : Si
- CODE No.:911-4978
| Order No. | 63-7803-02 | |
|---|---|---|
| Model No. | BSP318SH6327XTSA1 | |
| Standard price |
JPY: 80,500
USD: 504.61
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |
![[Out of stock]BSP318SH6327XTSA1 N-Channel MOSFET, 2.6 A, 60 V SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP318SH6327XTSA1](https://aimg.as-1.co.jp/c/63/7803/02/63780302.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)