Infineon

63-7802-21 IPP110N20N3GXKSA1 N-Channel MOSFET Transistor, 88 A, 200 V OptiMOS 3, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1

Features

  • Infineon OptiMOS™3 Power MOSFETs, 100V and over

Spec

  • Quantity:1set(50pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 88 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 11 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 300 W
  • Typical Turn-On Delay Time : 18 ns
  • CODE No.:911-4899
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Order No. 63-7802-21
Model No. IPP110N20N3GXKSA1
Standard price JPY: 27,600 USD: 171.73
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(50pieces)
Stock in Japan
Supplier Stock