63-7802-18 IPB072N15N3GATMA1 N-Channel MOSFET Transistor, 100 A, 150 V OptiMOS 3, 3-Pin D2PAK Infineon IPB072N15N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(1000pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 100 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 7.7 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 300 W
- Typical Turn-On Delay Time : 25 ns
- CODE No.:911-4864
| Order No. | 63-7802-18 | |
|---|---|---|
| Model No. | IPB072N15N3GATMA1 | |
| Standard price |
JPY: 354,000
USD: 2,202.59
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
| Stock in Japan |
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| Supplier Stock |
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