63-7802-17 IPB072N15N3GATMA1 N-Channel MOSFET, 100 A, 150 V OptiMOS 3, 3-Pin D2PAK Infineon IPB072N15N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 100 A
- Maximum Drain Source Voltage : 150 V
- Maximum Drain Source Resistance : 7.7 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 300 W
- Typical Input Capacitance @ Vds : 5470 pF @ 75 V
- CODE No.:752-8340
| Order No. | 63-7802-17 | |
|---|---|---|
| Model No. | IPB072N15N3GATMA1 | |
| Standard price |
JPY: 710
USD: 4.42
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|