63-7802-06 [Discontinued]BSP300H6327XUSA1 N-Channel MOSFET Transistor, 190 mA, 800 V SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP300H6327XUSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1set(1000pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 190 mA
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 20 Ω
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Pin Count : 3 + Tab
- Channel Mode : Enhancement
- Category : Small Signal
- Maximum Power Dissipation : 1.8 W
- Minimum Operating Temperature : -55 °C
- CODE No.:911-4861
| Order No. | 63-7802-06 | |
|---|---|---|
| Model No. | BSP300H6327XUSA1 | |
| Standard price |
JPY: 59,100
USD: 367.72
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(1000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BSP300H6327XUSA1 N-Channel MOSFET Transistor, 190 mA, 800 V SIPMOS, 3+Tab-Pin SOT-223 Infineon BSP300H6327XUSA1](https://aimg.as-1.co.jp/c/63/7802/06/63780206.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)