63-7733-53 SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3
Features
- Dual N/P-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity:1bag(5pieces)
- Channel Type : N, P
- Maximum Continuous Drain Current : 3.9 A, 5.3 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 72 mΩ, 150 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 3.1 W, 3.4 W
- Dimensions : 5 x 4 x 1.5mm
- CODE No.:710-3345
| Order No. | 63-7733-53 | |
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| Model No. | SI4559ADY-T1-GE3 | |
| Standard price |
JPY: 2,600
USD: 16.31
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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