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• 63-7733-53 SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay　SI4559ADY-T1-GE3

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• 63-7733-53 SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay　SI4559ADY-T1-GE3

Vishay

63-7733-53　SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay　SI4559ADY-T1-GE3

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Features

• Dual N/P-Channel MOSFET, Vishay Semiconductor

仕様

• Quantity:1bag(5pieces)
• Channel Type : N, P
• Maximum Continuous Drain Current : 3.9 A, 5.3 A
• Maximum Drain Source Voltage : 60 V
• Maximum Drain Source Resistance : 72 mΩ, 150 mΩ
• Minimum Gate Threshold Voltage : 1V
• Maximum Gate Source Voltage : -20 V, +20 V
• Package Type : SOIC
• Mounting Type : Surface Mount
• Transistor Configuration : Isolated
• Channel Mode : Enhancement
• Category : Power MOSFET
• Maximum Power Dissipation : 3.1 W, 3.4 W
• Dimensions : 5 x 4 x 1.5mm
• CODE No.:710-3345
•  

Order No.ASONEs="init"> Listed products : 3 milion products How to use English China Indonesia Korea Thailand Vietnam Contact us All Categories All Categories Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL Categories Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-7733-53 SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay　SI4559ADY-T1-GE3 AXEL GLOBAL Categories Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments RS Components 63-7733-53 SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay　SI4559ADY-T1-GE3 Vishay 63-7733-53　SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay　SI4559ADY-T1-GE3 Print PDF Features Dual N/P-Channel MOSFET, Vishay Semiconductor Spec Quantity:1bag(5pieces) Channel Type : N, P Maximum Continuous Drain Current : 3.9 A, 5.3 A Maximum Drain Source Voltage : 60 V Maximum Drain Source Resistance : 72 mΩ, 150 mΩ Minimum Gate Threshold Voltage : 1V Maximum Gate Source Voltage : -20 V, +20 V Package Type : SOIC Mounting Type : Surface Mount Transistor Configuration : Isolated Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 3.1 W, 3.4 W Dimensions : 5 x 4 x 1.5mm CODE No.:710-3345   Order No. 63-7733-53 Model No. SI4559ADY-T1-GE3 Standard price JPY: 2,440 USD: 15.18 Excange rate 1USD= 160.72JPY Valid price in Japan Quantity 1bag(5pieces) Stock in Japan Supplier Stock Quote Other Requests This page is the page of SI4559ADY-T1-GE3 Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.