63-7670-37 [Discontinued]FQP8N80C N-Channel MOSFET, 8 A, 800 V QFET, 3-Pin TO-220AB ON Semiconductor FQP8N80C
Features
- QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1set(50pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 8 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 1.55 Ω
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 178 W
- Dimensions : 10.1 x 4.7 x 9.4mm
- CODE No.:145-4314
| Order No. | 63-7670-37 | |
|---|---|---|
| Model No. | FQP8N80C | |
| Standard price |
JPY: 24,400
USD: 152.95
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(50pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FQP8N80C N-Channel MOSFET, 8 A, 800 V QFET, 3-Pin TO-220AB ON Semiconductor FQP8N80C](https://aimg.as-1.co.jp/c/63/7670/37/63767037.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)