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63-7670-27　［Discontinued］FQP2N60C N-Channel MOSFET, 2 A, 600 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP2N60C

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 2 A
  • Maximum Drain Source Voltage : 600 V
  • Maximum Drain Source Resistance : 4.7 Ω
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 54 W
  • Transistor Material : Si
  • CODE No.:671-5076
  •  
Order No. 63-7670-27
Model No. FQP2N60C
Standard price JPY: 700 USD: 4.36
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

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