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63-7670-18　［Discontinued］FQP13N10 N-Channel MOSFET, 12.8 A, 100 V QFET, 3-Pin TO-220AB ON Semiconductor　FQP13N10

Features

  • QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1set(50pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 12.8 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 180 mΩ
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -25 V, +25 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 65 W
  • Maximum Operating Temperature : +175 °C
  • CODE No.:145-5363
  •  
Order No. 63-7670-18
Model No. FQP13N10
Standard price JPY: 5,270 USD: 32.79
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(50pieces)
  Discontinued
Stock in Japan -

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