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[Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20 63-7670-17 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 63-7670-17 [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20
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  • 63-7670-17 [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20
ON Semiconductor

63-7670-17 [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20

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  • [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20

Features

  • QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1set(50pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 11.5 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 470 mΩ
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 120 W
  • Transistor Material : Si
  • CODE No.:145-4304
  •  
Order No. 63-7670-17
Model No. FQP12P20
Standard price JPY: 7,800 USD: 48.53
Excange rate 1USD= 160.72JPY
Valid price in Japan
QuantityQuantityass="init"> [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20 63-7670-17 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
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  • AXEL GLOBAL
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  • 63-7670-17 [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
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  • RS Components
  • 63-7670-17 [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20
ON Semiconductor

63-7670-17 [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20

  • 印刷
  • PDF
  • [Discontinued]FQP12P20 P-Channel MOSFET, 11.5 A, 200 V QFET, 3-Pin TO-220AB ON Semiconductor FQP12P20

特徴

  • QFET® P-Channel MOSFET, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

  • Quantity:1set(50pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 11.5 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 470 mΩ
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 120 W
  • Transistor Material : Si
  • CODE No.:145-4304
  •  
アズワン品番 63-7670-17
型番 FQP12P20
標準価格 JPY: 7,800 USD: 48.53
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(50pieces)
  <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
Stock in Japan -

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