ON Semiconductor

63-7670-14 FDP61N20 N-Channel MOSFET, 61 A, 200 V UniFET, 3-Pin TO-220AB ON Semiconductor FDP61N20

Features

  • UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

Spec

  • Quantity:1set(50pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 61 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 41 mΩ
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 417 W
  • Maximum Operating Temperature : +150 °C
  • CODE No.:145-5356
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Order No. 63-7670-14
Model No. FDP61N20
Standard price JPY: 15,700 USD: 98.41
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(50pieces)
Stock in Japan
Supplier Stock