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• 63-7670-11 2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor　2N7000

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• 63-7670-11 2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor　2N7000

ON Semiconductor

63-7670-11　2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor　2N7000

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特徴

• Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

• Quantity:1set(10000pieces)
• Channel Type : N
• Maximum Continuous Drain Current : 200 mA
• Maximum Drain Source Voltage : 60 V
• Maximum Drain Source Resistance : 5 Ω
• Minimum Gate Threshold Voltage : 0.8V
• Maximum Gate Source Voltage : -20 V, +20 V
• Package Type : TO-92
• Mounting Type : Through Hole
• Pin Count : 3
• Channel Mode : Enhancement
• Category : Small Signal
• Maximum Power Dissipation : 400 mW
• Number of Elements per Chip : 1
• CODE No.:169-8553
•  

Order No.	63-7670-11
Model No.	2N7000
標準価格	JPY: 275,000 USD: 1,711.05 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1set(10000pieces)
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