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ON Semiconductor

63-7670-11　2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor　2N7000

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1set(10000pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 200 mA
  • Maximum Drain Source Voltage : 60 V
  • Maximum Drain Source Resistance : 5 Ω
  • Minimum Gate Threshold Voltage : 0.8V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-92
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Small Signal
  • Maximum Power Dissipation : 400 mW
  • Number of Elements per Chip : 1
  • CODE No.:169-8553
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Order No. 63-7670-11
Model No. 2N7000
Standard price JPY: 275,000 USD: 1,723.81
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(10000pieces)
Stock in Japan
Supplier Stock

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