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63-7669-87　［Discontinued］FQT7N10LTF N-Channel MOSFET, 1.7 A, 100 V QFET, 3 + Tab-Pin SOT-223 ON Semiconductor　FQT7N10LTF

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1set(4000pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 1.7 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 350 mΩ
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-223
  • Mounting Type : Surface Mount
  • Pin Count : 3 + Tab
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2 W
  • Typical Gate Charge @ Vgs : 4.6 nC @ 5 V
  • CODE No.:166-1755
  •  
Order No. 63-7669-87
Model No. FQT7N10LTF
Standard price JPY: 250,000 USD: 1,555.50
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(4000pieces)
  Discontinued
Stock in Japan -

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