63-7669-72 FDS4935BZ Dual P-Channel MOSFET, 6.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS4935BZ
Features
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1set(2500pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 6.9 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 22 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -25 V, +25 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.6 W
- Typical Gate Charge @ Vgs : 29 nC @ 10 V
- CODE No.:146-2063
| Order No. | 63-7669-72 | |
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| Model No. | FDS4935BZ | |
| Standard price |
JPY: 228,000
USD: 1,429.20
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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