Infineon

63-7651-43　［Discontinued］IRLU3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK Infineon　IRLU3110ZPBF

印刷

特徴

N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

Quantity:1bag(5pieces)
Channel Type : N
Maximum Continuous Drain Current : 63 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 14 mΩ
Maximum Gate Threshold Voltage : 2.5V
Minimum Gate Threshold Voltage : 1V
Maximum Gate Source Voltage : -16 V, +16 V
Package Type : IPAK (TO-251)
Mounting Type : Through Hole
Transistor Configuration : Single
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 140 W
Typical Turn-Off Delay Time : 33 ns
CODE No.:650-4867

Order No.Order No.ss="init"> ［Discontinued］IRLU3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK Infineon　IRLU3110ZPBF 63-7651-43 【AXEL GLOBAL】 アズワン

取扱点数300万点

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Infineon

63-7651-43　［Discontinued］IRLU3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK Infineon　IRLU3110ZPBF

印刷

特徴

N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1bag(5pieces)
Channel Type : N
Maximum Continuous Drain Current : 63 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 14 mΩ
Maximum Gate Threshold Voltage : 2.5V
Minimum Gate Threshold Voltage : 1V
Maximum Gate Source Voltage : -16 V, +16 V
Package Type : IPAK (TO-251)
Mounting Type : Through Hole
Transistor Configuration : Single
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 140 W
Typical Turn-Off Delay Time : 33 ns
CODE No.:650-4867

アズワン品番	63-7651-43
Model No.	IRLU3110ZPBF
標準価格	JPY: 1,930 USD: 12.10 Excange rate 1USD= 159.53JPY Valid price in Japan
Quantity	1bag(5pieces)

Stock in Japan	-

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About usAbout usinit"> ［Discontinued］IRLU3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK Infineon　IRLU3110ZPBF 63-7651-43 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

Infineon

63-7651-43　［Discontinued］IRLU3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK Infineon　IRLU3110ZPBF

印刷

特徴

N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

Quantity:1bag(5pieces)
Channel Type : N
Maximum Continuous Drain Current : 63 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 14 mΩ
Maximum Gate Threshold Voltage : 2.5V
Minimum Gate Threshold Voltage : 1V
Maximum Gate Source Voltage : -16 V, +16 V
Package Type : IPAK (TO-251)
Mounting Type : Through Hole
Transistor Configuration : Single
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 140 W
Typical Turn-Off Delay Time : 33 ns
CODE No.:650-4867

アズワン品番	63-7651-43
型番	IRLU3110ZPBF
標準価格	JPY: 1,930 USD: 12.10 Excange rate 1USD= 159.53JPY Valid price in Japan
入り数	1bag(5pieces)

在庫数	-

[$1]［Discontinued］IRLU3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK Infineon[/$1]